张万里

副教授/博士，硕士生导师，清华大学访问学者，2012年6月毕业于湘潭大学微电子学本科专业。同年9月免试保送湘潭大学攻读电子科学与技术专业学硕士，后于2013年9月转为硕博连读生，2017年6月获湘潭大学材料科学与工程微电子材料与器件方向博士学位，主要从事铁电薄膜制备及信息存储器件的可靠性机理研究。近五年来，主持完成重庆市科委面上项目1项和重庆市教委青年项目2项，在Small、Ceramics International、Applied Physics Letters、Physica Status Solidi(RRL)-Rapid Research Letters、Physical Chemistry Chemical Physics、RSC Advances等国际知名期刊上公开发表SCI收录的学术论文20余篇，其中申请者为第一作者或通讯作者的SCI论文12篇。

主持项目

(1) 重庆市自然科学基金面上项目，cstc2019jcyj-msxmX0706，电脉冲循环下HfO2基铁电薄膜微区相结构转变与氧空位再分布的关联机制，2019/07-2022/06，10万元，已结题，主持

(2) 重庆市教委科学技术研究计划项目，青年项目，KJQN201801425，基于电脉冲和点缺陷调控的畴壁型铁电存储器件的研制与机理研究，2018-09至2021-09，5万元，已结题，主持

近期发表的相关论文

(1) Wanli Zhang, Xinpeng Mou, Yunpeng Ma, Yi Zheng, Sixu Wang, Liang Shu, Ziwan Du, Chenguang Deng, Qiong Yang*, Rong Yu*, Jing-Feng Li*, Qian Li* ; Phase coexistence induced giant dielectric tunability and electromechanical response in PbZrO3 epitaxial thin films, Small, 2025, 21:2410260.

(2) Wanli Zhang*, GuangliangWan, Yanrui Lin, Junxiong Leng, Hongfei Wei, Lian Cui, GuangzhaoWang, Yanhu Mao, Investigation of ionizing radiation mechanisms on HfO2-based ferroelectricthin-film memories with various configurations, Journal of Materials Science: Materials inElectronics, 2024, 35(296): 1-9.

(3) Yanhu Mao, Wanli Zhang*, Lian Cui, Minghua Tang*, Pengyu Su, Xiaojiang Long, Gang Li, Yongguang Xiao, Shaoan Yan, Growth kinetics of the ferroelectric Al-doped HfO2 thin films with a synergistic effect of vital influencing factors, Ceramics International, 2021, 47(4), 4674-4680.

(4) Wanli Zhang*, Yanhu Mao, Lian Cui, Minghua Tang*, Pengyu Su, Xiaojiang Long, Yongguang Xiao, Shaoan Yan, Impact of radiation effect on energy storage density and wake-up behaviors of antiferroelectric-like Al-doped HfO2 thin films, Physical Chemistry Chemical Physics, 2020, 22(38), 21893.

(5) Wanli Zhang*, Guangzhao Wang, Minghua Tang*, Lian Cui, Teng Wang, Pengyu Su, Zhuojun Chen, Xiaojiang Long, Yongguang Xiao, Shaoan Yan, Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric-Insulator-Semiconductor Structure. IEEE Access, 2020, 8, 108121.

(6) Wanli Zhang*, Gang Li, Xiaojiang Long, Lian Cui, Minghua Tang, Yongguang Xiao, Shaoan Yan, Yadong Li, Wenxi Zhao, A comparative study of the γ‐ray radiation effect on Zr-doped and Al-doped HfO2-based ferroelectric memory, Physica Status Solidi B, 2020, 257(5): 1900736.